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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
DESCRIPTION *With TO-3PFa package *Wide area of safe operation *High voltage,high speed APPLICATIONS *Horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.2A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.2A
1.5
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V A
VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0
10
1
mA A
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
hFE
DC current gain
IC=1A ; VCE=5V
6
30
fT
Transition frequency
IC=1A ; VCE=10V
2
MHz
Switching times s
tstg
Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V
1.5
tf
Fall time
0.2
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1739
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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