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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 DESCRIPTION *With TO-3PFa package *Wide area of safe operation *High voltage,high speed APPLICATIONS *Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 8.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 10 1 mA A IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=1A ; VCE=5V 6 30 fT Transition frequency IC=1A ; VCE=10V 2 MHz Switching times s tstg Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V 1.5 tf Fall time 0.2 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1739 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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